Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser
نویسندگان
چکیده
منابع مشابه
Continuous wave laser-induced temperature rise in the thin films of silicon nanocrystals using Raman scattering
Continuous wave (CW) laser-induced temperature rise is studied in Raman spectra of nanocrystalline-silicon (nC-Si) films on quartz and sapphire substrates. The zone-center-phonon (ZCP) mode in the Raman spectra shows remarkably different frequencies in the thin films as the incident CW laser power density is increased (always kept lower than that used during annealing). For the films on the qua...
متن کاملControlled Crystallization of Hydrogenated Amorphous Silicon Thin Films by Nanocrystallite Seeding
Microcrystalline silicon thin films have attracted much attention in recent years in active matrix-liquid-crystal displays and photo-voltaic solar cells. This is due primarily to their superior transport over amorphous alternatives while maintaining a significantly lower manufacturing cost over conventional wafer-grown silicon. The general goal of current microcrystalline development efforts is...
متن کاملPulsed Laser Porosification of Silicon Thin Films
We present a new and simple laser-based process to porosify thin film silicon using a pulsed laser. During deposition, we incorporate gas atoms or molecules into the Si thin film. Pulsed laser radiation of wavelength λ = 532 nm heats up thin film Si beyond its melting point. Upon heating, gas atoms or molecules form nm-sized thermally expanding gas bubbles in the silicon melt, until they explos...
متن کاملEffects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors
Articles you may be interested in A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization Appl. Improvement of the electrical performance in metal-induced lat...
متن کاملCrystallization of HWCVD amorphous silicon thin films at elevated temperatures
Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/ microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum conditions where the hydrogen content would be minimal and the films would still exhibit good optical properties. Experimental data shows that by varying de...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.2408945